Method for forming an insulating layer on a polycrystalline sili

Details Method for forming an insulating layer on a polycrystalline sili Method for forming an insulating layer on a polycrystalline sili

1981-05-18

1983-03-22

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 88, H01L 21316

Patent

active

043776051

ABSTRACT:
When an insulating layer is formed on a polycrystalline silicon layer by thermally oxidizing the polycrystalline silicon layer, ambient gas to be used as an oxidizing gas comprises an oxygen gas and an inert gas. It is preferable that the ratio of oxygen partial pressure of the ambient gas is up to 0.35.

REFERENCES:
patent: 4178396 (1979-12-01), Okano et al.
patent: 4214919 (1980-07-01), Young
patent: 4251571 (1981-02-01), Garbarino
Anderson et al., "Evidence for Surface Aspirity Mechanism of Conductivity in Oxide Grown on Polycrystalline Silicon," Journal of Applied Physics, vol. 48, No. 11, Nov. 1977, pp. 4834-4836.
Irene "Method to Reduce Defects in Very Thin SiO.sub.2 Films," IBM TDB, vol. 21, No. 1, p. 393, Jun. 1978.

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