Method for forming an insulating film layer of silicon oxynitrid

Details Method for forming an insulating film layer of silicon oxynitrid Method for forming an insulating film layer of silicon oxynitrid

1979-10-15

1981-08-04

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 94, 427255, 4272553, 4272554, H01L 21316, H01L 21318

Patent

active

042822700

ABSTRACT:
An insulating film layer consisting of silicon oxynitride is formed on a silicon semiconductor substrate surface by bringing a surface of a silicon substrate into contact with an ammonia gas atmosphere containing a gas comprising containing substance gas, for example, oxygen gas, carbon dioxide gas, carbon monoxide gas, nitrogen monoxide gas, nitrogen dioxide gas, or water vapor, in a volume concentration of from 10.sup.2 to 10.sup.4 ppm in terms of molecular oxygen, at an elevated temperature, for example, of from 900.degree.to 1300.degree. C.

REFERENCES:
patent: 3558348 (1971-01-01), Rand
patent: 3765935 (1973-10-01), Rand et al.
patent: 4051273 (1977-09-01), Abbas et al.
patent: 4097889 (1978-06-01), Kern et al.
Poponiak et al., "Formation of Thick Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.2 on Si Substrate by Anodinitridization", IBMTDB 19(3), 905, 1976.
Chu et al., "Films of Silicon Nitride-Silicon Dioxide Mixtures", J. Electrochem. Soc: Solid State Science, 115(3), 318-322, (1968).
Brown et al., "Properties of Si.sub.x O.sub.y N.sub.2 Films on Si", J. Electrochem. Soc: Solid State Science, 115(3), 311-317, (1968).

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