Method for forming an inductor

Semiconductor device manufacturing: process – Making passive device

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438406, H01L 2120

Patent

active

060838027

ABSTRACT:
A method for forming an inductor in a semiconductor substrate having a trench therein including the steps of forming a first metal portion in the trench, providing a flowable dielectric material in the trench, depositing a layer of dielectric material over the layer of first metal portion and flowable dielectric material, forming a plug in the layer of dielectric material wherein the plug is in electrical contact with the first metal portion, and forming a second metal portion over the layer of dielectric material wherein the second metal portion is in electrical contact with the plug.

REFERENCES:
patent: 5384274 (1995-01-01), Kanehachi
patent: 5742091 (1998-04-01), Hebert
patent: 5807783 (1998-09-01), Gaul et al.

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