Method for forming an indium antimonide layer

Details Method for forming an indium antimonide layer Method for forming an indium antimonide layer

1997-08-26

1999-01-19

Wyszomierski, George

Metal treatment

Process of modifying or maintaining internal physical...

Surface melting

148527, 148537, 427250, 427255, H01L 2124

Patent

active

058610693

ABSTRACT:
A method forms an indium antimonide layer by a sequential evaporation for use as a magnetic sensing material having high electron mobility. The method includes the steps of: (a) preparing a substrate; (b) pre-heating the substrate (c) depositing an antimony layer on top of the substrate; (d) forming an indium layer on top of the antimony layer to thereby obtain a sequentially deposited layer, wherein the sequentially deposited layer includes the antimony and the indium layers; (e) providing a protection layer on top of the sequentially deposited layer; and (f) heat treating the sequentially deposited layer to force inter-diffusion of antimony and indium, thereby producing the indium antimonide layer.

REFERENCES:
patent: 4177298 (1979-12-01), Shigeta et al.
patent: 4833103 (1989-05-01), Agostinelli et al.
patent: 5312643 (1994-05-01), Yamamoto et al.
patent: 5346842 (1994-09-01), Gedridge

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