Method for forming an improved gate member utilizing special mas

Details Method for forming an improved gate member utilizing special mas Method for forming an improved gate member utilizing special mas

1980-08-04

1981-07-14

Dean, R.

Metal working

Method of mechanical manufacture

Assembling or joining

29579, 29580, 148 15, 148175, 148187, 156649, 156653, 156657, 1566591, 430313, 430314, 430317, 357 4, 357 23, 357 54, H01L 21205, H01L 2184

Patent

active

042778840

ABSTRACT:
A novel process is described for forming a gate member for an SOS device wherein the objectionable point that appears at the top of the silicon island is removed. The point results when an anisotropic etch is utilized to form the island. The process includes first forming a relatively thick layer of CVD oxide around sides at the base portion of the island while the remainder of the sides of the island, including the objectionable point, remain exposed for further processing in order to remove the point. The point is then heavily oxidized to form a bird beak which bird beak joins the gate oxide with the CVD oxide to produce a rounded edge.

REFERENCES:
patent: 3508982 (1970-04-01), Shearin
patent: 3740280 (1973-06-01), Ronen
patent: 3890632 (1975-06-01), Ham et al.
patent: 3958266 (1976-05-01), Athanas
patent: 4054895 (1977-10-01), Ham
patent: 4070211 (1978-01-01), Harari
patent: 4076860 (1978-02-01), Kuroda
patent: 4097314 (1978-06-01), Schlesier et al.
patent: 4160260 (1979-07-01), Weitzel et al.
patent: 4174217 (1979-11-01), Flatley
patent: 4199384 (1980-04-01), Hsu
Ham et al., "Study of Microcircuits by Transmission Electron Microscopy", R.C.A. Review, vol. 38, Sep. 1977, pp. 351-389.

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