Method for forming an epitaxial compound semiconductor layer on

Details Method for forming an epitaxial compound semiconductor layer on Method for forming an epitaxial compound semiconductor layer on

1981-09-14

1983-12-20

Saba, W. G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 156612, 156613, 156614, 156657, 156662, H01L 2120, H01L 21306

Patent

active

044215762

ABSTRACT:
A first compound semiconductor layer is epitaxially formed on a surface of a semi-insulating substrate. The first semiconductor layer is then removed and a second compound semiconductor layer is epitaxially formed on the substrate surface which is now exposed.

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