Method for forming an electrostatic discharge protection device

Details Method for forming an electrostatic discharge protection device Method for forming an electrostatic discharge protection device

1994-08-01

1997-01-28

Niebling, John

Fishing, trapping, and vermin destroying

437 50, 437904, H01L 21265, H01L 2170, H01L 2700

Patent

active

055977588

ABSTRACT:
An ESD protection device and a method for forming the ESD protection device in an active region (13) which is devoid of a field oxide (14). A P type dopant region (22) and an N type dopant region (27) are formed in a semiconductor substrate (11) using photolithographic techniques, wherein they are spaced apart from each other by a spacer region (29). An anode electrode (33) contacts the P type dopant region (22) and a cathode electrode (34) contacts the N type dopant region (27). A parasitic diode resistance of the ESD protection device is governed by the width of the spacer region (29) which, in turn, is governed by the resolution of the photolithographic techniques. Thus, the present invention provides a method for lowering both the parasitic diode resistance and clamp voltage of the ESD protection device which serves to protect integrated circuits from large voltage transients.

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