Method for forming an electrical contact to a solar cell

Details Method for forming an electrical contact to a solar cell Method for forming an electrical contact to a solar cell

1980-01-30

1981-07-14

Hoffman, James R.

Coating processes

Electrical product produced

Photoelectric

427 74, 427 91, 427 93, B05D 302, B05D 310

Patent

active

042787041

ABSTRACT:
A method of forming an electrical contact to a shallow junction silicon semiconductor device such as a solar cell comprises evaporating a sufficient amount of a metal which upon heating will form a silicide with the silicon to a predetermined depth and thereafter oxidizing the surface of the silicon so as to form a shallower junction in the unoxidized portions of said silicon. The portion of the silicon device which has formed the silicide does not oxidize and forms an electrical contact to the silicon. In addition, the metal silicide can have additional metal plated thereto to lower the sheet resistivity and resistance of the electrical contact.

REFERENCES:
patent: 3801365 (1974-04-01), Hrzek
patent: 3811954 (1974-05-01), Lindmayer
patent: 3949463 (1976-04-01), Lindmayer et al.
patent: 4090213 (1978-05-01), Maserjian et al.
patent: 4105471 (1978-08-01), Yerkes et al.
patent: 4165241 (1979-08-01), Yerkes et al.
Rittner, "Recent Advances in Silicon Solar Cells for Space Use," undated.
Lindmayer et al., "The Violet Cell: An Improved Silicon Solar Cell," Comsat Technical Review, vol. 3, No. 1, spring 1973, pp. 1-21.
Pryor et al., "Metallization of Large Silicon Wafers," Quarterly Technical Report No. 3, (Apr. 1, 1978-Jun. 30, 1978), pp. 28-31.

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