Method for forming an avalanche photodiode

Details Method for forming an avalanche photodiode Method for forming an avalanche photodiode

2005-10-17

2009-06-30

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Avalanche diode manufacture

C257S233000, C257SE27133

Reexamination Certificate

active

07553734

ABSTRACT:
Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active region of sufficient width to enable high optical coupling efficiency and a low dark count rate. Some APDs fabricated using these methods have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is substantially minimized and further wherein the device region maintains a substantially uniform gain and breakdown voltage.

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