Method for forming an aluminum metal contact

Details Method for forming an aluminum metal contact Method for forming an aluminum metal contact

1994-02-07

1994-12-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437197, 437245, H01L 2144

Patent

active

053745922

ABSTRACT:
A method is provided for depositing aluminum thin film layers so as to form an improved metal contact in a semiconductor integrated circuit device. An initial layer of aluminum is deposited at a very low temperature, such as room temperature, to a depth sufficient to form a continuous layer. A second aluminum layer is then deposited at increasing temperatures and lower deposition rates in order to complete the deposition of the layer.

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