Method for forming an aluminum film used as an interconnect in a

Details Method for forming an aluminum film used as an interconnect in a Method for forming an aluminum film used as an interconnect in a

1995-11-06

1996-08-13

Quach, T. N.

Fishing, trapping, and vermin destroying

437194, 437195, 427252, H01L 21283

Patent

active

055455913

ABSTRACT:
A method for forming an interconnect comprises the steps of first covering an overall surface including a surface of a contact hole or a via-hole with a film of one of refractory metal and refractory metal compound and then depositing on the covered surface an aluminum film grown by a chemical vapor deposition (CVD) process using organic aluminum or trialkylamine-alane as a source material under a substrate temperature between 100.degree. C. and 180.degree. C. The organic aluminum is one of dimethylaluminum hydride, tri-isobutyl aluminum, trimethylamine-alane, and diethylaluminum hydride. The trialkylamine-alane is one of trimethylamine-alane and triethylamine-alane. Such aluminum film has good step-coverage so that, even when the diameter is small and the aspect ratio is high, the film can be deposited without an void being formed in the deposited film in the contact hole or the via-hole.

REFERENCES:
patent: 3375129 (1968-03-01), Carley et al.
patent: 4923717 (1990-05-01), Gladfelter et al.
patent: 5151305 (1992-09-01), Matsumoto et al.
patent: 5364664 (1994-11-01), Tsubouchi et al.
Wolf, Silicon Processing, vol. 2, Lattice Press, 1990, pp. 121-133.
K. Tsubouchi et al., "Selective and Nonselective Deposition of Aluminum by LPCVD Using DMAH and Microregion Observation of Single Crystal Aluminum With Scanning -Rheed Microscope", 1990 IEEE Symposium on VLSI Technology, Digest of Technical Papers.

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