Method for forming amorphous ferroelectric materials

Details Method for forming amorphous ferroelectric materials Method for forming amorphous ferroelectric materials

1992-09-23

1994-08-30

Beck, Shrive

Coating processes

Electrical product produced

Metallic compound coating

427100, 427346, 4273762, 4273855, 501134, B05D 512, C04B 3546

Patent

active

053426487

ABSTRACT:
Amorphous ferroelectric materials are formed by a sol-gel type process and the ferroelectric properties stabilized by complete hydrolysis and polycondensation, and extraction of residual organic materials, preferably by heating at temperatures below the temperature at which crystallization may occur. Stable solutions of metal alkoxides are prepared by reacting or dissolving a metal alkoxide in alcohol such as absolute ethanol. The solution may be spincast on essentially any substrate, conductor or nonconductor, crystalline or amorphous, transparent or opaque, and even including plastics. Hydrolysis and polycondensation occur in situ to deposit an amorphous ferroelectric film. Residual alcohol is extracted by heating below the temperature at which crystallization occurs. Such films show P-E hysteresis loops and pyroelectric current. Such ferroelectric thin films are useable in electronic, opto-electronic and optical devices.

REFERENCES:
Yi et al. "Preparation of Pb(Zr,Ti)O.sub.3 Thin Films by Sol Gel Precrossing: Electrical, Optical and Electro-Optic Properties," J. Appl. Phys. 64(5) 2717-2724 Sep. 88.
Lines, "Microscopic Model for a Ferroelectric Glass", Physical Review B, vol. 15, No. 1, Jan. 1, 1977, pp. 388-395.
Glass, et al, "Anomalous Dielectric Behavior and Reversible Pyroelectricity in Roller-Quenches LiNbO.sub.3 and LiTaO.sub.3 Glass", Applied Physics Letters, vol. 31, No. 4, Aug. 15, 1977, pp. 249-251.
Mitsuyu, and Wasa, "High Dielectric Constant Films of Amorphous LiNbO.sub.3 Prepared by Sputtering Deposition", Japanese Journal of Applied Physics, vol. 20, No. 1, Jan. 1981, pp. L48-L50.
Kitabatake, et al., "Structure and Dielectric Properties of Amorphous LiNbO.sub.3 Thin Films Prepared by a Sputtering Deposition", J. Appl. Phys. 56 (6), Sep. 15, 1984, 1984 American Institute of Physics, pp. 1780-1784.
Fukushima, et al., "Preparation of Ferroelectric PZT Films by Thermal Decomposition of Organometallic Compounds", Journal of Materials Science 19 (1984) pp. 595-598.
Budd, et al., "The Effect of Hydrolysis Conditions on the Characteristics of PbTiO.sub.3 Gels and Thin Films", Mat. Res. Soc. Symp. Proc. vol. 73, -1986 Materials Research Society, pp. 711-716.
Hirano, et al., "Formation of LinbO.sub.3 Films by Hydrolysis of Metal Alkoxides", Journal of Non-Crystalline Solids 100 (1988) pp. 538-541, North Holland, Amsterdam.
Dey, et al., "Thin-Film Ferroelectrics of PZT by Sol-Gel Processing", IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 35, No. 1, Jan. 1988, pp. 80-81.
Budd, et al., "The Effect of Hydrolysis Conditions on the Characteristics of PbTiO.sub.3 Gels and Thin Films", Mat. Res. Symp Proc. Vol. 72, 1986 Materials Research Society, pp. 317-322.
Wu, "Memory Retention and Switching Behavior of Metal-Ferroelectric-Semiconductor Transistors", Ferroelectrics 1976, vol. 11, pp. 479-484, (Gordon and Breach Science Publishers Ltd. 1976) Gr. Britain.
Chapman, et al., "Design and Performance of a Thin Film Ferroelectric-Photoconductor Storage Device", Ferroelectrics 1972, vol. 3, pp. 101-106, IEEE Trans. Sconics and Ultrasonics, 1972, SU 19, pp. 101.

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