Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1975-06-30
1985-09-24
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29580, 148175, 148187, 148DIG85, 148DIG117, 204 15, 204 345, 204 42, 20412935, 357 40, 357 49, 357 50, H01L 2120, H01L 2176
Patent
active
045425795
ABSTRACT:
In the fabrication of integrated circuits, a method is provided for forming dielectrically isolated regions in a semiconductor substrate comprising forming over the semiconductor substrate surface an electrically insulating layer of dielectric material having a plurality of openings therethrough and etching to form recesses in the semiconductor substrate exposed in the openings. Then, aluminum is deposited over the substrate so that an aluminum layer is formed on said layer of dielectric material as well as in said recesses. Next, the aluminum in the recesses is selectively anodized to form aluminum oxide, and the remaining aluminum on said layer of dielectric material is removed either by selectively etching away the aluminum layer or by a "lift-off" technique wherein the insulating layer of dielectric material under the aluminum is etched away thereby "lifting-off" and removing the aluminum.
REFERENCES:
patent: 3386865 (1968-06-01), Doo
patent: 3500139 (1970-03-01), Frouin et al.
patent: 3539876 (1970-11-01), Feinberg et al.
patent: 3634203 (1972-01-01), McMahon et al.
patent: 3671819 (1972-06-01), Swanson
patent: 3723258 (1973-03-01), Podell et al.
patent: 3919060 (1975-11-01), Pogge et al.
patent: 4005452 (1977-01-01), Cook
Cook et al., "Anodic Aluminum Isolation", Proc. Electron Devices Mtg., Wash., D.C., Nov. 17, 1974, pp. 266-269.
Doo et al., "Making Monolithic . . . Isolation Techniques", I.B.M. Tech. Discl. Bull., vol. 8, No. 4, Sep. 1965, pp. 659-660.
Deines, J. L., "Device Etching for Microscope Sample Preparation", I.B.M. Tech. Discl. Bull., vol. 15, No. 2, Jul. 1972, pp. 682-683.
Poponiak Michael R.
Schwenker Robert O.
Bigel Mitchell S.
Haase Robert J.
International Business Machines - Corporation
Kraft J. B.
Saba William G.
LandOfFree
Method for forming aluminum oxide dielectric isolation in integr does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming aluminum oxide dielectric isolation in integr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming aluminum oxide dielectric isolation in integr will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1608211