Method for forming a walled-emitter transistor

Details Method for forming a walled-emitter transistor Method for forming a walled-emitter transistor

1995-05-31

1998-12-08

Brown, Peter Toby

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Walled emitter

438309, 438362, 438366, 438439, 148DIG10, 148DIG11, 148DIG124, H01L 21331

Patent

active

058468684

ABSTRACT:
An embodiment of the present invention is a process for semiconductor device having a silicon substrate. The process comprises positioning at least one field implant mask and field implanting a silicon substrate around a bipolar active region in a substrate such that boron atoms are blocked out of an active region, and only the field region surrounding the active area is implanted, the implanting such that a predetermined layout area of a semiconductor device does not need to be increased to compensate for a BV.sub.bso problem.

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