Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1984-06-25
1985-07-09
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576W, 29578, 29580, 148174, 148DIG26, 148DIG50, 148DIG85, 148DIG25, 156643, 156644, 156648, 156653, 357 49, 357 50, H01L 21302, H01L 2176
Patent
active
045280479
ABSTRACT:
A void-free isolated semiconductor substrate is described which contains a pattern of substantially vertically sided trenches within a semiconductor body. The pattern of isolation trenches isolate regions of monocrystalline semiconductor material which may contain active and passive semiconductor devices. A first insulating layer is located upon the sidewalls of the trenches. The base or bottom of the trenches is open to the monocrystalline semiconductor body. An epitaxial layer extending from the base of the trenches fills the pattern of trenches up to a level from the upper surface of the trenches as specified approximately by the equation:
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Beyer Klaus D.
Silvestri Victor J.
International Business Machines - Corporation
Saba William G.
Saile George O.
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