Method for forming a virtual-ground flash EPROM array with float

Details Method for forming a virtual-ground flash EPROM array with float Method for forming a virtual-ground flash EPROM array with float

1994-03-15

1995-04-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437984, 257215, 257316, H01L 21265

Patent

active

054098548

ABSTRACT:
The floating gate of a virtual-ground flash electrically programmable read-only-memory (EPROM) cell, which is formed over a portion of a pair of vertically-adjacent field oxide regions, is self aligned to the field oxide regions by utilizing a stacked etch process to define the widths of both the floating gate and the field oxide regions. As a result, the pitch of the cells in the X direction can be substantially reduced.

REFERENCES:
patent: 5346842 (1994-09-01), Bergemont

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