Fishing – trapping – and vermin destroying
Patent
1995-09-29
1997-12-30
Niebling, John
Fishing, trapping, and vermin destroying
437195, 437194, 437235, 1566531, H01L 2144
Patent
active
057029814
ABSTRACT:
A method for forming vias in a semiconductor device improves the resistance and reliability of contacts formed by use of an etch stop layer during the via formation process. An etch stop layer (40), preferably a silicon nitride or aluminum nitride layer, is deposited over conductive interconnect (34). A via (44) is etched in interlayer dielectric (42), stopping on etch stop layer (40). Etch stop layer (40) is then anisotropicly etched to expose the top of conductive interconnect (34), while maintaining a portion of the etch stop layer along a sidewall of the interconnect, and particularly along those sidewall portions which contain aluminum. A conductive plug (54) is then formed in the via, preferably using one or more barrier or glue layers (50). Formation of a tungsten plug using tungsten hexafluoride can then be performed without unwanted reactions between the tungsten source gas and the aluminum interconnect.
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Blumenthal Roc
Klein Jeffrey L.
Maniar Papu D.
Wu Wei
Everhart C.
Goddard Patricia S.
Niebling John
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