Fishing – trapping – and vermin destroying
Patent
1992-11-17
1994-08-30
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 29, 437203, 437160, 437164, 148DIG126, H01L 21265
Patent
active
053427971
ABSTRACT:
A vertical power MOSFET comprising a metal base on which is disposed a highly doped n+ silicon substrate. A lightly doped epitaxial layer is grown on the substrate to form a drain region for conducting electrical charge carriers to the metal base. A gate region is disposed above the drain region and has side walls forming an aperture. Disposed on each side wall and axially aligned with the gate region are doped oxide spacers. Embedded within the source region beneath the aperture is a body region comprising a heavily doped region embedded within a lightly doped region. A source region, formed by diffusion from the doped oxide spacers, is disposed below each space and embedded within the body region.
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Chen Eugene J. C.
Sapp Steven P.
Wylie Neil
Chaudhuri Olik
National Semiconductor Corporation
Tsai H. Jey
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