Method for forming a triple-well in a semiconductor device

Details Method for forming a triple-well in a semiconductor device Method for forming a triple-well in a semiconductor device

1997-02-19

1999-04-20

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438420, H01L 2176

Patent

active

058952519

ABSTRACT:
A method of forming a triple-well in a semiconductor device, includes the steps of forming a second conductivity type impurity region in a first conductivity type semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, forming a second conductivity type first well in a first portion of the epitaxial layer, and a second conductivity type second well in a second portion of the epitaxial layer, and forming a first conductivity type first well in the first portion of the epitaxial layer, and a first conductivity type second well in a portion of the epitaxial layer between the second conductivity type first and second wells.

REFERENCES:
patent: 4155777 (1979-05-01), Dunkley et al.
patent: 4332627 (1982-06-01), Schmitt et al.
patent: 4456488 (1984-06-01), Gahle
patent: 4931406 (1990-06-01), Tomioka
patent: 5118631 (1992-06-01), Dyck et al.
patent: 5145794 (1992-09-01), Kase et al.
patent: 5238860 (1993-08-01), Sawada et al.
patent: 5286991 (1994-02-01), Hui et al.
patent: 5292671 (1994-03-01), Odanaka
patent: 5397734 (1995-03-01), Iguchi et al.
patent: 5460984 (1995-10-01), Yoshida
patent: 5501993 (1996-03-01), Borland
patent: 5595925 (1997-01-01), Chen et al.
Wolf, Stanley "Silicon Processing For the VLSI Era vol. 1: Process Technology", Lattice Press, p. 125, 1986.
Wolf, Stanley "Silicon Processing For the VLSI Era vol. 2: Process Integration", Lattice Press, pp. 482-500, 534-551, 1990.

Affiliated with

Also associated with

Rating

Method for forming a triple-well in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a triple-well in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a triple-well in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2244162