Method for forming a transistor with a trench

Details Method for forming a transistor with a trench Method for forming a transistor with a trench

1995-11-09

1997-12-02

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 67, 437 72, 437203, H01L 21786

Patent

active

056935420

ABSTRACT:
A method for forming a transistor comprising the steps of: forming a trench in a substrate; filling an insulating layer in the lower portion of said trench except for the upper portion thereof; filling a conductive layer in the upper portion of said trench and on said insulating layer for a channel of the said transistor; forming a gate oxide layer on the resulting structure; and forming a gate electrode on said gate oxide layer; and implanting impurity ions into said substrate to form a source/drain region.

REFERENCES:
patent: 4636281 (1987-01-01), Buiguez
patent: 5362669 (1994-11-01), Boyd et al.
patent: 5399520 (1995-03-01), Jang
patent: 5494837 (1996-02-01), Subramanian et al.

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