Method for forming a thin semiconductor film

Details Method for forming a thin semiconductor film Method for forming a thin semiconductor film

1991-08-05

1993-08-03

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 86, 437101, 437106, 437949, 437969, 437971, 148DIG51, 148DIG109, 156610, 4272551, H01L 21203

Patent

active

052328686

ABSTRACT:
A method for forming a thin semiconductor film comprises the steps of supplying on a surface of a heated substrate a first material gas composed of germanium halide or germanium hydro-fluoride obtained by partially substituting fluorine of the germanium fluoride together with a second material gas composed of silicon hydride or silicon fluoro-hydride obtained by partially substituting hydrogen of the silicon hydride with fluorine and causing a chemical reaction between the first and second material gases, thereby growing a thin film containing germanium over the surface of the substrate. By controlling the substrate temperature or flow rate ratio of the first material gas to the second material gas, an optical gap of the thin film grown can be controlled.

REFERENCES:
patent: 4716048 (1987-12-01), Ishihara et al.
patent: 4726963 (1988-02-01), Ishihara et al.
patent: 4808553 (1989-02-01), Yamazaki
patent: 4818563 (1989-04-01), Ishihara et al.
patent: 5011759 (1991-04-01), Hitotsuyanagi

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