Method for forming a thin layer on a semiconductor substrate and

Details Method for forming a thin layer on a semiconductor substrate and Method for forming a thin layer on a semiconductor substrate and

1991-04-18

1993-01-12

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

156345, 156643, 20429825, H01L 2100

Patent

active

051786826

ABSTRACT:
A method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300.degree. C. in the presence of ozone gas under exposure to UV light. Through this process, organic contaminants that might be present on the surface of the silicon substrate are dissipated by oxidation, and a thin oxide film is formed on the substrate surface on the other. The silicon substrate with the thin oxide film coated thereon is then heated up to temperatures of 200.degree.-700.degree. C. in the presence of HCl gas under illumination to UV light to strip the oxide film off the substrate surface, thereby exposing the cleaned substrate surface. Finally, HCl cleaned surface of the silicon substrate is coated with a thin layer of material such as monocrystalline silicon without exposing the cleaned substrate surface. The method provides a semiconductor with the thin layer of material formed thereon having a well-controlled, well organized interface between them.

REFERENCES:
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patent: 4595601 (1986-06-01), Horioka et al.
patent: 4642171 (1987-02-01), Sekine et al.
Takamori et al., "Cleaning of MBE GaAs Substrates by Hydrogen. . .", Jpn. J. Applied Phys., vol. 26, No. 2, Feb. 1987, pp. L142-L144.
R. Sugino et al., "Through-Oxide Cleaning of Silicon Surface by Photo-Excited Radicals", Extended Abstracts of the 19th Conf. on Solid State Devices and Materials, Tokyo 1987.
E. Kinsbron et al., "Crystallization of Amorphous Silicon Films During Low Pressure Chemical Vapor Deposition", Appl. Phys. Lett., vol. 42, No. 9 (May 1, 1983).

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