Method for forming a thin layer on a semiconductor substrate

Details Method for forming a thin layer on a semiconductor substrate Method for forming a thin layer on a semiconductor substrate

1989-03-01

1991-07-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG17, 437173, 437939, 437946, 437239, H01L 2120

Patent

active

050285602

ABSTRACT:
A method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300.degree. C. in the presence of ozone gas under exposure to UV light. Through this process, organic contaminants that might be present on the surface of the silicon substrate are dissipated by oxidation, and a thin oxide film is formed on the substrate surface on the other. The silicon substrate with the thin oxide film coated thereon is then heated up to temperature of 200.degree.-700.degree. C. in the presence of HCl gas under illumination to UV light to strip the oxide film off the substrate surface, thereby exposing the cleaned substrate surface. Finally, HCl cleaned surface of the silicon substrate is coated with a thin layer of material such as monocrystalline silicon without exposing the cleaned substrate surface. The method provides a semiconductor device with the thin layer of material formed thereon having a well-controlled, well-organized interface between them.

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