Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-06-30
1991-01-08
Roy, Upendra
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
156600, 156610, 427 62, 505729, 505732, B05D 512, C23C 1600
Patent
active
049835700
ABSTRACT:
The invention provides a method of forming thin layers of superconducting materials and a superconducting device. In accordance with the invention, such layers are formed by the epitaxial growth, on a substrate, of the different constituent elements by regulating the admission of the different constituents so as to obtain a superconducting layer whose mesh parameter substantially matches that of the substrate. Epitaxying may also be carried out directly from a superconducting material.
REFERENCES:
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Creuzet Gerard
Friederich Alain
"Thomson-CSF"
Roy Upendra
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