Method for forming a thin film transistor

Details Method for forming a thin film transistor Method for forming a thin film transistor

1994-09-06

1996-04-23

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437 52, 148DIG109, H01L 21786

Patent

active

055102786

ABSTRACT:
An under-gated thin film transistor (54) having low leakage current and a high on/off current ratio is formed using a composite layer (40) of semiconducting material. In one embodiment a composite layer (40) of semiconducting layer is formed by depositing two distinct layers (34, 38) of semiconducting material over the transistor gate electrode (18). The composite layer (40) is then patterned and implanted with ions to form a source region (46) and a drain region (48) within the composite layer (40), and to define a channel region (50) and an offset drain region (52) within the composite layer (40).

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