Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2006-07-18
2006-07-18
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S382000, C438S385000
Reexamination Certificate
active
07078306
ABSTRACT:
The present invention relates to a method for forming a thin film resistor and a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is formed over the gate structure. A via is then etched that extends through the dielectric layer so as to expose a portion of the gate structure. A layer of titanium nitride is deposited using a chemical vapor deposition process. A rapid thermal anneal is performed in an oxygen ambient. The rapid thermal anneal incorporates oxygen into the titanium nitride, forming titanium oxynitride film. A layer of dielectric material is then deposited and etched-back to form a dielectric plug that fills the remaining portion of the via. The titanium oxynitride film is patterned to form a titanium oxynitride structure that is electrically coupled to the gate structure. A metal layer is deposited and patterned to form an interconnect structure that electrically couples the titanium oxynitride structure to other circuitry.
REFERENCES:
patent: 5585301 (1996-12-01), Lee et al.
patent: 5710070 (1998-01-01), Chan
patent: 6127217 (2000-10-01), Madurawe et al.
patent: 6461929 (2002-10-01), Lobl et al.
patent: 6466124 (2002-10-01), Shibuya et al.
Cao Wanqing
Jin Gaolong
Lee Shih-Ked
Lo Guo-Qiang
Dang Trung
Glass Kenneth
Glass & Associates
Integrated Device Technology Inc.
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