Method for forming a thin film on a semiconductor device using a

Details Method for forming a thin film on a semiconductor device using a Method for forming a thin film on a semiconductor device using a

1990-12-18

1994-07-12

Hearn, Brian E.

Metal working

Barrier layer or semiconductor device making

437225, 118719, H01L 21302, H01L 21463, C23C 1600

Patent

active

053276248

ABSTRACT:
A method for forming a thin film on a semiconductor substrate wherein the substrate is transferred between an auxiliary chamber having an inert atmosphere to a reaction chamber having a reactive atmosphere, and wherein the inert and the reactive atmospheres exist concurrently during transfer.

REFERENCES:
patent: 4405435 (1983-09-01), Tateishi et al.
patent: 4498416 (1985-02-01), Bouchaib
patent: 4505950 (1985-03-01), Yamazaki
patent: 4592306 (1986-06-01), Gallego
patent: 4607593 (1986-08-01), Van Hemel
patent: 4664062 (1987-05-01), Kamohara et al.
patent: 4681773 (1987-07-01), Bean
patent: 4733631 (1988-03-01), Boyarsky et al.

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