Method for forming a thin film of a silicon oxide on a silicon s

Details Method for forming a thin film of a silicon oxide on a silicon s Method for forming a thin film of a silicon oxide on a silicon s

1995-06-07

1998-05-19

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

438288, 438783, 427571, 427579, H01L 2102

Patent

active

057535647

ABSTRACT:
A method for forming a thin film of a silicon oxide on a silicon substrate is disclosed. An Si oxide film is formed by an ECR plasma. CVD with the use of a silicon compound gas containing fluorine, whereby the generation of particles can be suppressed to improve the quality of the device and the yield, the planarity of the Si oxide film functioning as an interlayer dielectric film or a passivation film can be improved, and the higher speed operation in a semiconductor device can be accomplished.

REFERENCES:
patent: 4894352 (1990-01-01), Lane et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5204288 (1993-04-01), Marks et al.
patent: 5215787 (1993-06-01), Homma
patent: 5219783 (1993-06-01), Moslehi
patent: 5252515 (1993-10-01), Tsai et al.
patent: 5273936 (1993-12-01), Ikeda
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5334552 (1994-08-01), Homma
Fukuda et al "Preparation of SiO.sub.2 Films with Low Deposited Dielectric Constant by ECR Plasma CVD" Mar. 29, 1993.
Extended Abstracts (The 40th Spring Meeting, 1993); The Japan Society of Applied Physics and Related Societies, pp. 752.
Fukuda et al, "Preparation of SiO.sub.2 Films with Low Deposited Dielectric Constant by ECR Plasma CVD", Extended, Sep. 27, 1993.
Abstracts (The 54th Autumn Meeting, 1993); The Japan Society of Applied Physics, pp. 692.
Preparation of SiOF Films with Low Dielectric Constant by ECR Plasma Chemical Vapor Deposition, ssdm '93, The Japan Society of Applied Physics, Imternational Conference on Solid State Devices and Materials, Aug. 29-Sep. 1, 1993, Chiba, Japan, pp. 158-160.
Nonaka et al, "Photochemical Vapor Deposition of Amorphous Silica Films Using Disilane and Perfluorosilanes: Defect Structures and Deposition Mechanism" J. Appl. Phys. 64(8), 15 Oct. 1988.
"Preparation of SiOF Films with Low Dielectric Constant by ECR Plasma Chemical Vapor Deposition" Takashi Fukada and Takashi Akahori, Research and Development Division, Sumitomo Metal Industries, Ltd. 30 Aug. 1993.

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