Method for forming a thin film of a metal compound by vacuum dep

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

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427229, 427250, 427294, 20419212, H05H 100, B05D 302, C23C 1435

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061033200

ABSTRACT:
A method for forming a thin film of a metal compound is disclosed. Within a vacuum chamber, a metallic ultra-thin film of a metal or an incompletely-reacted metal is deposited on a substrate. The metallic ultra-thin film is brought in contact with the electrically neutral activated species of a reactive gas so as to convert the metallic ultra-thin film to an ultra-thin film of a metal compound through the reaction of the metallic ultra-thin film with the activated species of the reactive gas. The above-described steps are sequentially repeated so as to deposit on the substrate the ultra-thin film of the metal compound in layers until a thin film of the metal compound having a desired thickness is formed on the substrate.

REFERENCES:
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patent: 5234560 (1993-08-01), Kadlec et al.
patent: 5346600 (1994-09-01), Nieh et al.
patent: 5618388 (1997-04-01), Seeser et al.
Patent Abstracts of Japan, vol. 12, No. 358 (C-531), Sep. 26, 1988 & JP 63-114966, May 19, 1988.
J. Vac. Sci. Technol. A (15)(5), Sep./Oct. 1997, pp. 2670-2672, Tang, Ogura, Yamasaki, and Kikuchi.

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