Method for forming a thin film capacitive memory deivce with a h

Details Method for forming a thin film capacitive memory deivce with a h Method for forming a thin film capacitive memory deivce with a h

1994-06-03

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

H01L 2170

Patent

active

054440114

ABSTRACT:
A method is disclosed for making a thin film capacitive memory device with a high dielectric constant. A lower electrode of yttrium or hafnium is formed on a semiconductor substrate. A dielectric insulating film is formed on the lower electrode, and the dielectric insulating film is annealed such that at thinner portions the dielectric insulating film, the lower electrode is oxidized more heavily than at thicker portions of the dielectric insulating film. An upper electrode is formed on the dielectric insulating film.

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"Promising Storage Capacitor . . . High-Density DRAM's", IEEE Transactions On Electron Devices, vol. 37, No. 9, 1990, Shinriki et al.
"Dielectric Properties of Y.sub.2 O.sub.3 Thin Films Prepared By Vacuum Evaporation", Journal Of Applied Physics, Tstusumi, Jun. 5, 1969.

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