Method for forming a thin film

Details Method for forming a thin film Method for forming a thin film

1988-08-30

1990-09-25

Pianalto, Bernard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427250, 4272552, 4272553, 427294, 427307, B05D 306

Patent

active

049592424

ABSTRACT:
When reactive gases are directed toward a substrate disposed in a vacuum atmosphere, the reactive gases are activated by irradiation with an electron beam. Tbe reactive gases react with vapor or cluster ions of a material to be deposited, thereby forming a thin film of the reaction products. Therefore, a thin film with high quality can be efficiently deposited on a substrate.

REFERENCES:
Fitzgerald et al, "NASA Tech Brief", Aug. 1986, Part G.
Fukushima, "Characteristics of TiO.sub.2 Films Deposited by a Reactive Ionized Cluster Beam" J. Appl. Phys. 58(11), 12-1-85.
Ueda et al, "A Study on the Simultaneous use of an ICB System and a Microwave Ion Source", Proc. 10th Symp. on ISI at Tokyo (1986).

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