Method for forming a thin dielectric layer on a substrate

Details Method for forming a thin dielectric layer on a substrate Method for forming a thin dielectric layer on a substrate

1991-04-25

1993-12-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437 29, 437241, H01L 21265

Patent

active

052683117

ABSTRACT:
Disclosed is a thin dielectric inorganic layer overlaying a substrate, and having a thickness of.ltoreq. about 20 nm and a defect density of.ltoreq. about 0.6 defects/cm.sup.2 determined by BV measurements.
Also disclosed is a method of forming such a layer, according to which a layer having the desired composition and thickness is formed on a substrate, followed by an ion implantation into the substrate through the layer with a dose of.gtoreq. about 10.sup.15 ions/cm.sup.2 and a subsequent anneal at a temperature of.gtoreq. about 500.degree. C. for a predetermined time.

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