Method for forming a thin dielectric layer on a substrate

Details Method for forming a thin dielectric layer on a substrate Method for forming a thin dielectric layer on a substrate

1989-08-29

1991-09-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437 29, 437235, 437241, H01L 21265, H01L 2102

Patent

active

050513770

ABSTRACT:
Disclosed is a thin dielectric inorganic layer overlaying a substrate, and having a thickness of .ltoreq. about 20 nm and a defect density of .ltoreq. about 0.6 defects/cm.sup.2 determined by BV measurements.
Also disclosed is a method of forming such a layer, according to which a layer having the desired composition and thickness is formed on a substrate, followed by an ion implanatation into the substrate through the layer with a dose of .gtoreq. about 10.sup.15 ions/cm.sup.2 and a subsequence anneal at a temperature of .gtoreq. about 500.degree. C. for a predetermined time.

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