Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Patent
1997-01-27
1999-05-04
Niebling, John F.
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
438713, H01L 21302
Patent
active
058997474
ABSTRACT:
A method for forming a gate with a tapered spacer is disclosed. The method includes forming a polysilicon layer on a substrate, and then forming a first oxide layer on the polysilicon layer. A photoresist layer is formed on the first oxide layer, where the photoresist layer defines a gate region, and then portions of the oxide layer and the polysilicon layer are removed using the photoresist layer as a mask, thereby forming a gate. A second oxide layer is formed on the substrate and the first oxide layer. Afterwards, the second oxide layer is isotropically etched so that the slope of the second oxide layer near the upper corners of the gate is reduced. Finally, the second oxide layer is anisotropically etched back to form spacers on the sidewalls of the gate.
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Wu Kuo-Chang
Yen Tzu-Shih
Hack Jonathan
Niebling John F.
Vanguard International Semiconductor Corporation
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