Method for forming a strained Si-channel in a MOSFET structure

Details Method for forming a strained Si-channel in a MOSFET structure Method for forming a strained Si-channel in a MOSFET structure

2004-11-30

2008-08-26

Nguyen, Ha (Department: 2829)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S479000, C438S482000, C438S486000, C257S347000, C257S616000

Reexamination Certificate

active

07416957

ABSTRACT:
Method for forming a strained Si layer on a substrate (1), including formation of: an epitaxial SiGe layer (4) on a Si surface, and of: the strained Si layer by epitaxial growth of the Si layer on top of the epitaxial SiGe layer (4), the Si layer being strained due to the epitaxial growth, wherein the substrate (1) is a Silicon-On-Insulator substrate with a support layer (1), a buried silicon dioxide layer (BOX) and a monocrystalline Si surface layer (3), the method further including: ion implantation of the Si surface layer (3) and the epitaxial SiGe layer (4) to transform the Si surface layer (3) into an amorphous Si layer (3B) and a portion of the epitaxial SiGe layer (4) into an amorphous SiGe layer (5), a further portion of the epitaxial SiGe layer (4) being a remaining monocrystalline SiGe layer (6), the amorphous Si layer (3B), the amorphous SiGe layer and the remaining monocrystalline SiGe layer (6) forming a layer stack (3B,5, 6) on the buried silicon dioxide layer (BOX), with the amorphous Si layer (3B) being adjacent to the buried silicon dioxide layer (BOX).

REFERENCES:
patent: 6410371 (2002-06-01), Yu et al.
patent: 6455398 (2002-09-01), Fonstad et al.
patent: 6689671 (2004-02-01), Yu et al.
patent: 6774015 (2004-08-01), Cohen et al.
patent: 2002/0140031 (2002-10-01), Rim
patent: 2003/0077882 (2003-04-01), Shih et al.
patent: 2003/0218189 (2003-11-01), Christiansen et al.
patent: 2004/0087114 (2004-05-01), Xiang et al.

Affiliated with

Also associated with

Rating

Method for forming a strained Si-channel in a MOSFET structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a strained Si-channel in a MOSFET structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a strained Si-channel in a MOSFET structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4013529