Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1995-12-14
2000-02-29
Tsai, Jey
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
H01L 218242, H01G 706
Patent
active
060308478
ABSTRACT:
The invention is a storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant.
The method comprises forming the conductive plug in a thick layer of insulative material such as oxide or oxide
itride. The conductive plug is recessed from a planarized top surface of the thick insulative layer. The barrier layers is formed in the recess and the top layer. The process continued with a formation of an oxidation resistant conductive layer and the deposition of a further oxide layer to fill remaining portions of the recess. The oxidation resistant conductive layer is planarized to expose the oxide or oxide
itride layer and the oxide layers are then etched to expose the top surface and vertical portions of the oxidation resistant conductive layer.
Next a dielectric layer having a high dielectric constant is formed to overlie the storage node electrode and a cell plate electrode is fabricated to overlie the dielectric layer.
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Fazan Pierre C.
Mathews Viju K.
Micro)n Technology, Inc.
Tsai Jey
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