Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2008-07-01
2008-07-01
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C257SE21396, C257SE21648
Reexamination Certificate
active
11726143
ABSTRACT:
Described are integrated circuit electrodes and method for fabricating an electrode, which include, in an embodiment forming a silicon, first portion of the electrode in a lower region of a substrate opening. The method may further include forming a second portion of the electrode in the opening and overlying the first portion, the insulative layer encompassing a sidewall of the second portion. The method may further include forming a third portion of the electrode overlying the second portion and overlying at least a portion of the insulative layer, wherein the first portion and the second portion are different materials. In an embodiment, the second portion is a diffusion barrier layer and the third portion is an oxidation resistant layer. In an embodiment, the method includes encompassing a lower sidewall of the third portion with the insulative layer.
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Fazan Pierre C.
Mathews Viju K.
Coleman W. David
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
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