Method for forming a stacked capacitor in a semiconductor device

Details Method for forming a stacked capacitor in a semiconductor device Method for forming a stacked capacitor in a semiconductor device

1994-05-13

1995-08-22

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, H01L 218242

Patent

active

054440106

ABSTRACT:
This invention relates to a method for forming a stacked capacitor in a semiconductor device. This invention can increase the capacitance of a capacitor by planarizing a polysilicon layer for a charge storage electrode and forming a recess on the planarized polysilicon layer.

REFERENCES:
patent: 5084405 (1992-01-01), Fazan et al.

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