Method for forming a sputtered metal film

Details Method for forming a sputtered metal film Method for forming a sputtered metal film

1992-07-08

1994-04-05

Maples, John S.

Fishing, trapping, and vermin destroying

437247, 437931, 20419211, 20419225, 148DIG105, H01L 21465, H01L 21324, C23C 1434

Patent

active

053004620

ABSTRACT:
A method is disclosed for alloying a sputtered metal film by forming a sputtered metal film of first metal atoms over a semiconductor substrate through a first mask and implanting a first impurity of second metal atoms into the sputtered film. Then a second mask having at least one window is formed on the sputtered film by removing said first mask and a second impurity of third metal atoms is then implanted. The substrate and film are then heat treated to form a first alloy area in which the first metal atoms and the second metal atoms are mixed and a second alloy area in which the first metal atoms and the third metal atoms are mixed.

REFERENCES:
patent: 3871067 (1975-03-01), Bogardus et al.
patent: 3887994 (1975-06-01), Ku et al.
patent: 4333226 (1982-06-01), Abe et al.
patent: 4382826 (1983-05-01), Pfleiderer et al.
patent: 4385947 (1983-05-01), Halfacre et al.

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