Method for forming a spacer

Details Method for forming a spacer Method for forming a spacer

1999-03-30

2000-08-01

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 438734, 438740, H01L 2100

Patent

active

060966572

ABSTRACT:
A method is disclosed for forming a spacer, wherein said formation is preferably performed in a single dry etch sequence in a single dry etch tool. In this single dry etch sequence subsequently polysilicon spacers are defined, used as an etch mask and removed. Said etch sequence comprises at least one dry etching step. In case said etch sequence comprises more than one dry etching step, then these etching steps are performed subsequently in the same etch tool without breaking vacuum in said etch tool. In an embodiment of the invention the capability of using a single dry etch sequence for the formation of nitride spacers, using polysilicon spacer masking and the in-situ removal of the remaining polysilicon spacers, is demonstrated.

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patent: 5843835 (1998-12-01), Liu
patent: 5935875 (1999-08-01), Lee
Steven Ward et al., "A Highly Sensitive Anisotropic Nitride Etch Process Using SF6/HBR Chemistries", 1046b Extended Abstracts, vol. 93/1, Jan. 1, 1993, pp. 1261-1262.
K. Ehinger et al., "Narrow BF.sub.2 Implanted Bases For 35 GHz/24 ps High-Speed Si Bipolar Technology", Proceedings of the International Electron Devices Meeting, Washington, Dec. 8-11, 1991, Dec. 8, 1991, pp. 91/459-462, Institute of Electrical and Elctronics Engineers, pp. 16.5.1-16.5.4.

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