Method for forming a silicon oxynitride layer

Details Method for forming a silicon oxynitride layer Method for forming a silicon oxynitride layer

2007-06-05

2007-06-05

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S743000, C438S756000, C438S680000, C257S021000, C257S017000, C257S278000, C257S293000

Reexamination Certificate

active

11252560

ABSTRACT:
A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is performed over a substrate after a silicon nitride/silicon oxide layer has been formed on the substrate by a glow discharge system to transform the silicon nitride/silicon oxide layer into a silicon oxynitride layer. The semiconductor device may be completely manufactured in simplex equipment. Therefore, the production time and production cost are favorably reduced.

REFERENCES:
patent: 5674783 (1997-10-01), Jang et al.
patent: 6407007 (2002-06-01), Tsan et al.
patent: 6569777 (2003-05-01), Hsu et al.
patent: 6878639 (2005-04-01), Tsai et al.
Lin-En Chou, et al., “An Improvement Process for Gate Oxide of LTPS TFT by Using N2O Plasma Nitridation.” 2004 SID.

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