Method for forming a silicon oxide film on a silicon waffer

Details Method for forming a silicon oxide film on a silicon waffer Method for forming a silicon oxide film on a silicon waffer

1992-08-11

1995-03-07

Lusignan, Michael

Coating processes

Electrical product produced

Metallic compound coating

427314, 4274432, 437238, B05D 100

Patent

active

053956451

ABSTRACT:
Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

REFERENCES:
patent: 2505629 (1950-04-01), Thomsen
patent: 4468420 (1984-08-01), Kawahara
patent: 4990462 (1991-02-01), Sliwa
patent: 5073408 (1991-12-01), Goda
patent: 5114760 (1992-05-01), Takemura
patent: 5132140 (1992-07-01), Goda

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