Method for forming a silicon on insulator device

Details Method for forming a silicon on insulator device Method for forming a silicon on insulator device

1994-06-29

1995-06-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 26, 437 28, 437 34, 148DIG150, H01L 218238

Patent

active

054260620

ABSTRACT:
A silicon on insulator integrated circuit device is provided which comprises a substrate (10), a buried oxide layer (12), and an outer silicon layer (14). A buried (p)-layer (16) and a buried (n)-well region (26) are formed in order to position (p)-(n) junctions beneath (n)-channel and (p)-channel devices respectively formed in the outer silicon layer (14) outwardly from the (p)-layer (16) and (n)-well (26).

REFERENCES:
patent: 4907053 (1990-03-01), Ohmi
patent: 5079607 (1992-01-01), Sakurai
patent: 5103277 (1992-04-01), Cavaglia
patent: 5294556 (1994-03-01), Kawamura
patent: 5344785 (1994-09-01), Jerome et al.

Affiliated with

Also associated with

Rating

Method for forming a silicon on insulator device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a silicon on insulator device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a silicon on insulator device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1843891