Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge
Patent
1988-09-13
1990-10-30
Valentine, Donald R.
Chemistry: electrical and wave energy
Processes and products
Electrostatic field or electrical discharge
20412965, 204295, C25F 312, C25F 314
Patent
active
049666630
ABSTRACT:
A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to silicon and controlling both the total concentration and concentration profile of the dopant. The membrane is then formed by electrochemically etching away the substrate beneath the doped layer.
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Nanostructures, Inc.
Valentine Donald R.
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