Method for forming a silicon carbide film

Details Method for forming a silicon carbide film Method for forming a silicon carbide film

1992-06-19

1993-10-19

Pianalto, Bernard

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

427255, 4272552, 4272557, 427294, 427585, C23C 1600

Patent

active

052543706

ABSTRACT:
In a method for forming a silicon carbide film by means of a hot wall type CVD apparatus, which comprises placing a substrate S in a reaction tube 1, reducing the pressure in the reaction tube 1 with an exhaust pump 4 while heating the reaction tube 1 with a heater 2, and introducing a plurality of gases into the reaction tube 1 through at least one gas-introducing tube, the silicon carbide film is formed on the substrate S from at least an acetylene gas and a dichlorosilane gas as a plurality of the above gases by alternately repeating the following procedures (A) and (B),

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