Method for forming a silicide using ion beam mixing

Details Method for forming a silicide using ion beam mixing Method for forming a silicide using ion beam mixing

1994-02-23

1995-11-28

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437 24, 148DIG19, H01L 21283, H01L 21265

Patent

active

054707943

ABSTRACT:
An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method utilizes ion beam mixing by implanting germanium to a specific elevation level within a metal layer overlying a silicon contact region. The implanted germanium atoms impact upon and move a plurality of metal atoms through the metal-silicon interface and into a region residing immediately below the silicon (or polysilicon) surface. The metal atoms can therefore bond with silicon atoms to cause a pre-mixing of metal with silicon near the interface in order to enhance silicidation. Germanium is advantageously chosen as the irradiating species to ensure proper placement of the germanium and ensuing movement of dislodged metal atoms necessary for minimizing oxides left in the contact windows and lattice damage within the underlying silicon (or polysilicon).

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