Method for forming a silicide layer and barrier layer on a semic

Details Method for forming a silicide layer and barrier layer on a semic Method for forming a silicide layer and barrier layer on a semic

1991-12-19

1993-06-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437215, 29840, 29843, 2281802, 228254, H01L 2152, H01L 2158, H01L 2160

Patent

active

052179222

ABSTRACT:
A method of manufacturing a semiconductor device wherein the back surface of a semiconductor chip is adhered closely to a substrate or a seal member through a soldering material or the like, and a metallized layer is formed on the back surface of the chip for attaining good adhesion. The metallized layer according to the present invention is a layer formed by laminating a metal silicide, a barrier metal and an oxidation preventing metal successively on the back of the chip. The layer of the metal silicide can be formed in a known heat treatment process, for example, simultaneously with the formation of bump electrodes, on a main surface of the semiconductor chip by the heat used at the time of forming such bump electrodes, or simultaneously with the mounting of the semiconductor chip by the heat used at the time of the chip mounting.

REFERENCES:
"Micro-solder Bonding Technology for ICs and LSIs", by Ryohei Satoh, et al; Japan Metal Society Proc., vol. 23, No. 12 (1984).

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