Method for forming a shallow trench with tapered profile and rou

Details Method for forming a shallow trench with tapered profile and rou Method for forming a shallow trench with tapered profile and rou

1997-03-20

1998-09-15

Fourson, George R.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438701, 438713, 438978, 438424, 438734, H01L 2176

Patent

active

058077898

ABSTRACT:
The present invention is a method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI). This invention utilizes a multiple-step dry etching process with reduced RF power and increased pressure to etch a shallow trench. This takes advantage of different degree of polymer deposition in different steps by varing the pressure and the RF power. Thus, a shallow trench with tapered profile and round corners is achieved.

REFERENCES:
patent: 4349409 (1982-09-01), Shibayama et al.
patent: 4456501 (1984-06-01), Bayman et al.
patent: 5460689 (1995-10-01), Raaijmakers et al.
patent: 5474650 (1995-12-01), Kumihashi et al.

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