Method for forming a shallow trench isolation structure

Details Method for forming a shallow trench isolation structure Method for forming a shallow trench isolation structure

1998-10-02

2000-10-24

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438700, 438706, 438712, H01L 21461

Patent

active

061367133

ABSTRACT:
A method for forming a shallow trench isolation (STI) structure adds an etching back process to a conventional method which only uses a chemical mechanical process (CMP) process to accomplish the STI structure. In the method of the invention, the CMP process preliminarily planarizes a substrate to remove an insulation layer above the trench and uses the etching back process to accomplish the STI structure.

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