Method for forming a shallow trench isolation structure

Details Method for forming a shallow trench isolation structure Method for forming a shallow trench isolation structure

1999-03-29

2000-03-07

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438437, 438978, 148DIG50, H01L 2176

Patent

active

060339683

ABSTRACT:
A method for forming a shallow trench isolation structure. A mask layer having an opening is formed over a substrate to pattern a shallow trench. A sloped spacer is formed on the sidewalls of the opening. The mask layer and the spacer are used as a hard mask, and a portion of the substrate is removed by anisotropic etching to form a shallow trench isolation structure. The sloped sidewalls of the shallow trench isolation structure and the substrate surface intersect at an obtuse angle. Therefore, the structure prevents stress and avoids leakage current.

REFERENCES:
patent: 5696019 (1997-12-01), Chang
patent: 5920786 (1999-07-01), Pham et al.
patent: 5933749 (1999-08-01), Lee
patent: 5945352 (1999-08-01), Chen et al.
patent: 5953621 (1999-09-01), Gonzalez et al.

Affiliated with

Also associated with

Rating

Method for forming a shallow trench isolation structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a shallow trench isolation structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a shallow trench isolation structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-362476